dual n-channel enhancement mode field symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r jl 35 40 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1.44 w power dissipation t a =25c p d 2 a t a =70c 5.8 pulsed drain current b 30 continuous drain current a t a =25c i d 6.9 drain-source voltage 30 v gate-source voltage 20 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units AO4812 features v ds (v) = 30v i d = 6.9a (v gs = 10v) r ds(on) < 28m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) the AO4812 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812 is pb-free (meets rohs & sony 259 specifications). AO4812l is a green product ordering option. AO4812 and AO4812l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 general description effect transistor www.freescale.net.cn 1 / 4
AO4812 symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m ? g fs 10 15.4 s v sd 0.76 1 v i s 3a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 3 3.6 ? q g (10v) 13.84 17 nc q g (4.5v) 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 7 ns t r 4.1 6.2 ns t d(off) 20.6 30 ns t f 5.2 7.5 ns t rr 16.5 20 ns q rr 7.8 10 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge turn-off fall time switching parameters total gate charge total gate charge gate source charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? v gs =10v, v ds =15v, i d =6.9a gate drain charge reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =6.9a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =6.9a m ? v gs =4.5v, i d =5.0a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v i f =6.9a, di/dt=100a/ s i f =6.9a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : sept 2005 www.freescale.net.cn 2 / 4
AO4812 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 125c 25c 25c i d =5a 5v 6v www.freescale.net.cn 3 / 4
ao481 2 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0 .1 s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s www.freescale.net.cn 4 / 4
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